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Placeholder for the owner: write a short, sourced introduction to Samsung coverage. Published stories are listed below. Do not add unsourced history or figures.
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A Seoul appeals court cut the term from seven years to five for leaking Samsung's 18-nanometer DRAM process technology to China's CXMT, with more ex-Samsung trials pending.
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Korean press reports say Samsung formed a Core Team in its Semiconductor Research Center for next-gen DRAM and NAND; the details rest on unnamed industry sources.
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NVIDIA announced capacity deals with six suppliers covering substrates, interposers, testing and co-packaged optics, including a $1.1 billion advance to KYEC for US test sites.
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Omdia data reported by KED Global show YMTC took 38.5% of China's NAND market in Q2 2026, ahead of Samsung, as Samsung and SK hynix upgrade their China fabs.
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Samsung's System LSI unit has chosen a 2nm process for its next 5G modem, and The Elec reports the 4nm capacity this frees is being converted to HBM, where 4nm makes the base die.
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Samsung is said to be converting its Xian plant to 286-layer flash by year-end, and SK hynix its Dalian plant to 240+ layers, to hold off YMTC and CXMT as AI data centers drive demand.
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Samsung is bringing a fourth Pyeongtaek fab online and restarted a fifth it paused in 2024, a bid to win back HBM share from SK hynix in AI memory.
Chips & Power Desk